semiconductors summary bv ceo = -30v : r sat = 24m ; i c = -5.5a description packaged in the sot89 outline this new 5th generation low saturation 30v pnp transistor offers low on state losses making it ideal for use in dc-dc circuits, line switching and various driving and power management functions. features ? 5.5 amps continuous current ? up to 20 amps peak current ? very low saturation voltages ? exceptional gain linearity down to 10ma ? excellent high current gain hold up applications ? dc - dc converters ? mosfet gate drivers ? charging circuits ? power switches ? motor control device marking ? 949 ZX5T949Z issue 3 - december 2004 mpps? 30v pnp low saturation medium power transistor in sot89 1 s o t 8 9 pinout top view device reel size tape width quantity per reel ZX5T949Zta 7" 12mm embossed 1000 units ordering information obsolete - please use zxtp2008z
ZX5T949Z semiconductors issue 3 - december 2004 2 parameter symbol limit unit collector-base voltage bv cbo -50 v collector-emitter voltage bv ceo -30 v emitter-base voltage bv ebo -7 v continuous collector current (a) i c -5.5 a peak pulse current i cm -20 a power dissipation at t a =25c (a) linear derating factor p d 1.5 12 w mw/c power dissipation at t a =25c (b) linear derating factor p d 2.1 16.8 w mw/c absolute maximum ratings parameter symbol v alue unit junction to ambient (a) r ja 83 c/w junction to ambient (b) r ja 60 c/w notes (a) for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) for a device surface mounted on 50mm x 50mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions. thermal resistance obsolete - please use zxtp2008z
ZX5T949Z semiconductors issue 3 - december 2004 3 characteristics obsolete - please use zxtp2008z
ZX5T949Z semiconductors issue 3 - december 2004 4 parameter symbol min. typ. max. unit c onditions collector-base breakdown voltage bv cbo -50 -70 v i c = -100 a collector-emitter breakdown voltage bv cer -50 -70 v i c =-1 a, rb <1k collector-emitter breakdown voltage bv ceo -30 -40 v i c = -10ma * emitter-base breakdown voltage bv ebo -7.0 -8.0 v i e = -100 a collector cut-off current i cbo <-1 -20 -0.5 na a v cb = -40v v cb = -40v,t amb =100c collector cut-off current i cer r<1k <-1 -20 -0.5 na a v cb = -40v v cb = -40v,t amb =100c emitter cut-off current i ebo <-1 -10 na v eb = -6v collector-emitter saturation voltage v ce(sat) -25 -35 -55 -55 -130 -40 -55 -80 -80 -175 mv mv mv mv mv i c = -0.5a, i b = -20ma * i c = -1a, i b = -100ma * i c = -1a, i b = -20ma * i c = -2a, i b = -200ma * i c = -5.5a, i b =-500ma * base-emitter saturation voltage v be(sat) -970 -1070 mv i c = -5.5a, i b = -500ma * base-emitter turn-on voltage v be(on) -860 -960 mv i c = -5.5a, v ce = -1v * static forward current transfer ratio h fe 100 100 70 10 225 200 145 20 300 i c = -10ma, v ce = -1v * i c = -1a, v ce = -1v * i c = -5a, v ce = -1v * i c = -20a, v ce = -1v * transition frequency f t 110 mhz i c = -100ma, v ce = -10v f = 50mhz output capacitance c obo 83 pf v cb = -10v, f = 1mhz * switching times t on t off 43 230 ns i c = -1a, v cc = -10v, i b1 =-i b2 = -100ma electrical characteristics (at t amb = 25c unless otherwise stated) notes * measured under pulsed conditions. pulse width 300s; duty cycle 2%. obsolete - please use zxtp2008z
ZX5T949Z semiconductors issue 3 - december 2004 5 typical characteristics obsolete - please use zxtp2008z
ZX5T949Z semiconductors 6 issue 3 - december 2004 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquaters zetex semiconductors plc lansdowne road, chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2004 controlling dimensions are in millimeters. approximate conversions are given in inches package outline pad layout details dim millimeters inches dim millimeters inches min max min max min max min max a 1.40 1.60 0.550 0.630 e 1.40 1.50 0.055 0.059 b 0.38 0.48 0.015 0.019 e 3.75 4.25 0.150 0.167 b1 - 0.53 - 0.021 e1 - 2.60 - 0.102 b2 1.50 1.80 0.060 0.071 g 2.90 3.00 0.114 0.118 c 0.28 0.44 0.011 0.017 h 2.60 2.85 0.102 0.112 d 4.40 4.60 0.173 0.181 - ---- package dimensions obsolete - please use zxtp2008z
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